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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N-Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
2
CASE 318 - 08, STYLE 10 SOT- 23 (TO - 236AB)
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc Vdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage (VGS = 10 Vdc, VDS = 0) (ID = 0.5 nAdc, VDS = 10 Vdc) (ID = 1.0 mAdc, VDS = 10 Vdc) (ID = 50 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 BFR30 BFR31 IGSS VGS(OFF) VGS -- -- -- - 0.7 -- -- -- 0.2 5.0 2.5 - 3.0 - 1.3 - 4.0 - 2.0 nAdc Vdc Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Berquist Company.
Motorola Inc. 1996 (c) Motorola, Small-Signal Transistors, FETs and Diodes Device Data
1
BFR30LT1 BFR31LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
Zero - Gate -Voltage Drain Current (VDS = 10 Vdc, VGS = 0) BFR30 BFR31 IDSS 4.0 1.0 10 5.0 mAdc
SMALL- SIGNAL CHARACTERISTICS
Forward Transconductance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 kHz) Output Admittance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 mAdc, VDS = 10 Vdc) Input Capacitance Reverse Transfer Capacitance yfs BFR30 BFR31 BFR30 BFR31 yos BFR30 BFR31 Ciss Crss 40 20 -- -- -- -- 25 15 5.0 4.0 1.5 1.5 pF pF 1.0 1.5 0.5 0.75 4.0 4.5 -- -- mAdc
mAdc
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
BFR30LT1 BFR31LT1
TYPICAL CHARACTERISTICS
5 VDS = 15 V VGS = 0 RS = 1 MW
14 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 VDS = 15 V VGS = 0 f = 1 kHz
NF, NOISE FIGURE (dB)
4
3
2
1
0
0.01
0.1
1.0 f, FREQUENCY (kHz)
10
100
0
0.001
0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms)
10
Figure 1. Noise Figure versus Frequency
Figure 2. Noise Figure versus Source Resistance
1.2
1.2 VGS(off) 1.0 I D , DRAIN CURRENT (mA) 0.8 0.6 0.4 0.2 0
^ -1.2 V
VGS = 0 V 1.0 - 0.2 V I D , DRAIN CURRENT (mA) 0.8
VGS(off)
^ -1.2 V
VDS = 15 V
- 0.4 V - 0.6 V - 0.8 V - 1.0 V 0 10 15 20 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 5 25
0.6 0.4 0.2 0 - 1.2
- 0.8 - 0.4 VGS, GATE - SOURCE VOLTAGE (VOLTS)
0
Figure 3. Typical Drain Characteristics
Figure 4. Common Source Transfer Characteristics
Motorola Small-Signal Transistors, FETs and Diodes Device Data
3
BFR30LT1 BFR31LT1
TYPICAL CHARACTERISTICS
5 VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 4 VGS(off) 3
5 VGS(off) 4
^ - 3.5 V
^ - 3.5 V
-1 V
3 VDS = 15 V 2
2 -2 V -3 V 0 0 10 15 20 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 5 25
1
1
0 -5
-3 -2 -1 -4 VGS, GATE - SOURCE VOLTAGE (VOLTS)
0
Figure 5. Typical Drain Characteristics
Figure 6. Common Source Transfer Characteristics
10
10
I D , DRAIN CURRENT (mA)
-1 V 6 -2 V 4 -3 V 2 -4 V -5 V 0 0 10 15 20 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) 5 25
I D , DRAIN CURRENT (mA)
8
VGS(off)
^ - 5.8 V
VGS = 0 V 8
VGS(off)
^ - 5.8 V
6 VDS = 15 V 4
2
0 -7
-6
-5 -4 -3 -2 -1 VGS, GATE - SOURCE VOLTAGE (VOLTS)
0
Figure 7. Typical Drain Characteristics
Figure 8. Common Source Transfer Characteristics
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
BFR30LT1 BFR31LT1
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION
The power dissipation of the SOT-23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
Motorola Small-Signal Transistors, FETs and Diodes Device Data
5
BFR30LT1 BFR31LT1
PACKAGE DIMENSIONS
A L
3
BS
1 2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60
V
G
C D H K J
DIM A B C D G H J K L S V
STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE
CASE 318-08 ISSUE AE SOT-23 (TO-236AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
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Motorola Small-Signal Transistors, FETs and Diodes Device Data BFR30LT1/D
*BFR30LT1/D*

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